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Resistive-switching and current-conduction mechanisms in F8BT polymer resistive switch

Awais, Muhammad N, Mustafa, Maria, Shehzad, Muhammad N, Farooq, Umer, Hamayun, Mirza T and Choi, Kyung H (2016) Resistive-switching and current-conduction mechanisms in F8BT polymer resistive switch. Micro & Nano Letters, 11 (11). pp. 712-714. ISSN 1750-0443

Item Type: Article


Poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT) polymer has been investigated to elucidate the resistive-switching properties in a sandwiched structure of indium tin oxide (ITO)/F8BT/aluminium (Al). An active layer of F8BT polymer was deposited on the ITO-coated polyethylene terepthalate through spin coating. Morphologically, the layer was characterised with field emission scanning electron microscope. The fabricated sample showed resistive-switching properties within ±5 V with an OFF/ON ratio of 10:1. The switching characteristics were attributed to the transition of trap-limited space charge-limited conduction (SCLC) to trap-filled SCLC. It is shown through energy band diagram that memory effects in the fabricated sample were due to the trapping of electrons in the F8BT active layer that were injected from the top Al electrode.

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Depositing User: Umer Farooq


Item ID: 16378
Identification Number:
ISSN: 1750-0443
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ORCID for Umer Farooq: ORCID iD

Catalogue record

Date Deposited: 23 Aug 2023 08:46
Last Modified: 23 Aug 2023 08:46


Author: Umer Farooq ORCID iD
Author: Muhammad N Awais
Author: Maria Mustafa
Author: Muhammad N Shehzad
Author: Mirza T Hamayun
Author: Kyung H Choi

University Divisions

Faculty of Technology > School of Engineering


Engineering > Electrical Engineering

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